FORM 6-K

SECURITIES AND EXCHANGE COMMISSION

TOWER SEMICONDUCTOR LTD.

(Translation of registrant's name into English)

Ramat Gavriel Industrial Park

P.O. Box 619, Migdal Haemek, Israel 2310502

  (Address of principal executive offices)

Indicate by check mark whether the registrant files or will file annual reports under cover Form 20-F or Form 40-F.

Form 20-F ☒           Form 40-F ☐

 

Indicate by check mark whether the registrant by furnishing the information contained in this Form is also thereby furnishing the information to the Commission pursuant to Rule 12g3-2(b) under the Securities Exchange Act of 1934.

 

Yes ☐           No ☒

 

On June 10, 2020, the Registrant and Xperi announced New License for 3D

Stacked Image Sensor Technology

SIGNATURES

Pursuant to the requirements of the Securities Exchange Act of 1934, the registrant has duly caused this report to be signed on its behalf by the undersigned, thereunto duly authorized.

 

 

www.xperi.com

FOR IMMEDIATE RELEASE

Xperi and Tower Semiconductor Announce New License for 3D Stacked Image Sensor Technology

 

“With our fast portfolio expansion, Xperi’s leadership in direct and hybrid bonding technologies enables us to support the rapidly evolving requirements of our customer base as they develop next-generation applications,” said Dr. Avi Strum, Senior Vice President and General Manager of the Sensors Business Unit, Tower Semiconductor. “3D stacking architectures and integration are core to our strategy of providing the highest value, proven analog semiconductor solutions, including event-driven and time of flight sensors for mobile, automotive, industrial and high-end photography applications.”

 

With the recently released full design kit for hybrid bonding, Tower’s customers can now design their products on two different wafers, an imager wafer and a mixed-signal CMOS wafer, that are then stacked together with electrical connections on a pixel level, from 10um pitch for applications such as Direct ToF (dToF) and event-driven sensors, down to 2.5um and even below for applications such as mobile ToF for face recognition applications.  This separation into two wafers allows very high speed circuitry on the CMOS side, with very high sensitivity pixels, due to backside illumination, and extremely low dark current, below 1 electron/sec per square micron at 60 degrees Celsius, on the imager side. Tower’s unique platform also allows the use of different Epi thicknesses for near infrared sensitivity enhancement.

 

“Tower Semiconductor continues to strengthen its position as a leading and trusted analog foundry partner of customers around the world,” said Craig Mitchell, President of Invensas, a wholly owned subsidiary of Xperi. “Our ZiBond and DBI technologies support the manufacturing of a wide range of devices. We are excited to partner with Tower Semiconductor to deploy our foundational 3D integration technologies into a range of new sensors, in particular time of flight sensors, which we anticipate will be increasingly utilized in automotive, mobile and industrial applications. This partnership continues the strong momentum Xperi has enjoyed as manufacturers worldwide position themselves to address an evolving range of industry needs.”

 

Industry momentum is building around 3D semiconductors that are smaller, thinner and higher performance to enable a new wave of applications for automotive, industrial, Internet of Things, edge computing and consumer device markets. Invensas has achieved fundamental advances in the semiconductor packaging and interconnect technologies required to create 3D stacked chips that satisfy demanding size and performance requirements. Invensas ZiBond direct bonding technology and DBI hybrid technology are ideal for high-throughput, low cost-of-ownership fabrication processes.

About Xperi

About Tower Semiconductor

 

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